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Research Article
ARTICLE IN PRESS
doi:
10.25259/JKSUS_148_2025

Energy spectrum and dynamical properties of Dirac fermions in 3D SnTe(001) surface state under combined exchange and strain effects

Department of Physics, An-Najah National University, Nablus, P400, Palestine

* Corresponding author E-mail address: mkelsaid@najah.edu (M. Elsaid)

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This is an open-access article distributed under the terms of the Creative Commons Attribution-Non Commercial-Share Alike 4.0 License, which allows others to remix, transform, and build upon the work non-commercially, as long as the author is credited and the new creations are licensed under the identical terms.

Abstract

This paper presents a comprehensive investigation of the essential properties of topological insulator materials, specifically focusing on 3D crystalline topological insulators. We have examined the crystalline topological insulator tin telluride (SnTe) deposited on a magnetic substrate material. By solving the anisotropic mass Hamiltonian, we obtained expressions for the eigenenergy spectra in the presence of exchange proximity. These energy expressions were then used to study the electronic properties of the material, including bandgap behavior, group velocity, and effective mass, as influenced by the strength of the induced exchange effect.

Keywords

Band gap
Dynamical properties
Dirac fermions
Effective mass
Topology

1. Introduction

Many aspects of condensed matter physics are concerned with classifying phases of matter. The primary electronic phases of matter are insulator, conductor, and semiconductor. Other phases have later been classified, such as the magnet and the superconductor. These phases are generally described by phase transitions between two phases with different symmetry properties (Moore, 2010; Qi et al., 2011). Over the past decades, the exploration of the quantum Hall effect has led to a new class of topological insulators (TI) (Moore, 2009; Wang, 2013; Zhang et al., 2009). TI are electronic materials that insulate the inside like an ordinary insulator, but have conducting states on their surface.

Topological insulators come in various forms, including 2D and 3D topological insulators, as well as topological superconductors, which have been thoroughly investigated, both quantitatively and quantitatively (Batra and Sheet, 2020; Boothroyd, 2022; Furchi et al., 2012; Ma et al., 2015). These categories of materials hold promise for a wide range of applications. In this paper, we will focus on Topological crystalline insulators (TCIs), particularly on SnTe, due to its significant material properties and device applications (Batra and Sheet, 2020; Zhang et al., 2009). SnTe and Pb1−x Snx(Te,Se) are the first experimentally observed TCIs (Dziawa et al., 2012; Hsieh et al., 2012; Tanaka et al., 2012; Xu et al., 2012). Tin Telluride is an important material in the 3D topological insulator class. This material exhibits a unique combination of bulk insulating behavior and conductive surface states, which results from the presence of reflection symmetry of the Rocksalt crystal structure with respect to the (110) mirror plane. This symmetry is mathematically characterized by an integer topological invariant known as the mirror Chern number (Tanaka et al., 2012). Such behavior makes it a model system for studying the interplay between topology and symmetry in 3D materials. Numerous studies have been conducted to manipulate the topological phase in TCIs through various external parameters. These include symmetry breaking via strain, electric or magnetic fields, temperature modulation, Rashba spin–orbit coupling, coupling to a ferromagnetic substrate, and the introduction of charged impurities (Dziawa et al., 2012; Ngo et al., 2021; Xu et al., 2012).

In 2013, Yung Jui Wang, et al. conducted a first-principles calculations of the surface states in the TCI SnTe. Their findings show that four Dirac cones of the energy dispersion of surface states appear at the intersection line of the surface and mirror planes (Wang, 2013). Timothy H. Hsieh et al. also showed that SnTe has metallic surface states with an even number of Dirac cones on high-symmetry crystal surfaces such as {001}, {110}, and {111} that are protected by reflection symmetry (Hsieh et al., 2009; Xu et al., 2012).

By 2020, Researchers Pham, Binh, Viet, Dung, and Hoi studied Rashba spin–orbit coupling (RSOC) effects on Dirac fermions in SnTe topological crystalline insulator (Pham et al., 2020). RSOC alters dispersion, group velocity (Vg), and effective mass (m*) (Pham et al., 2020). Hsieh et al. investigate the influence of external elastic strain and in-plane magnetic field on the TCIs (Hsieh et al., 2012). In 2021, Ngo, Hieu, Lanh, Anh, and Hoi used Dirac theory they study exchange field effects on effective mass and group velocity in SnTe/ferromagnet heterostructures (Ngo et al., 2021).

SnTe has the potential, due to its unique electronics and thermoelectric properties, to make significant contributions to emerging technologies such as topological quantum computing and low-power spintronics devices. Motivated by the noble material properties of SnTe, we aim to build on the Hamiltonian predicted by Mitchell and Wallis based on the k·p theory (Mitchell et al., 1966). We will obtain the energy levels via matrix diagonalization. In addition, the group velocity and effective mass as dynamical properties of the 3D topological insulator will be investigated both numerically and analytically. The dynamic properties of the heterostructure of the topological SnTe/ferromagnetic device have not been thoroughly investigated theoretically for spintronic devices, such as FETs. In this paper, we explore these properties to assess the potential of SnTe, for example, as a channel material in FETs.

The paper is organized as follows: In Section 2, we present the theory. Section 3 shows results. The conclusion has been presented in Section 4

2. Theory (computational part)

SnTe exhibits a naturally inverted band ordering, where the valence band originates from the cation Sn atoms, and the conduction band arises from Te atoms. This inversion, in contrast to a conventional ionic insulator, leads to the emergence of the TCI phase in SnTe (Tanaka et al., 2012; Liu et al., 2013).

The k.p method is a powerful framework used to describe the electronic band structure of semiconductor materials. In this theory, the Schrödinger equation is expanded near specific high-symmetry points in the Brillouin zone of a crystal lattice, which provides a set of equations that describe how the energy levels change with variations of wave vector k. Selecting the X1 point in the (001) surface, the band structure near this point can be described by a four-band k·p theory in the basis of the Bloch states of L points (Furchi et al., 2012; Tanaka et al., 2012). To obtain the Hamiltonian for a material like SnTe, we begin by using the Dirac Hamiltonian in 4x4 matrix form (Bzdušek et al., 2015):

(1)
H ^ ( k ) = ( m 0 ivk z v ( ik x k y ) 0 m v ( ik x + k y ) ivk z ivk z v ( ik x k y ) m 0 v ( ik x + k y ) ivk z 0 m )

The Hamiltonian of the {001} surface of SnTe must remain invariant under reflection along the x-axis, reflection along the y-axis, time-reversal symmetry, and rotational symmetry. The corresponding symmetry-preserving operators, listed in the same order as these invariant symmetries, are given by: ( M x = i s x ,   M y = i τ x s y ,     Θ = i s y ,     and   M r = i τ x s z )

Knowing that the Hamiltonian must be invariant under these operators, the following terms must be included in the Hamiltonian:

(2)
n τ x + δ σ y τ y

The Hamiltonian near X1 point takes the following equation:

(3)
H ^ 1 ( k ) = v 1 k x σ y v 2 k y σ x +   n τ x + δ σ y τ y + M σ z

Where the first two terms represent the Dirac term, resulting in energy linearly dependent on k, similar to photons. The third and fourth terms are associated with the {001} surface as discussed earlier. The last term signifies a mass term, arising from external factors like a ferromagnetic layer or an electric field. The values of the constants in this Hamiltonian are: The Fermi velocity along the x-axis is given by ν 1 = 1.3 eV.Å, while along the y-axis equals ν 2 =2.4 eV.Å. The two parameters n=0.07 eV and δ =0.026 eV represent intervalley scattering at the lattice scale to reproduce the experimental observations (Mitchell and Wallis, 1966; Xu et al., 2012), and σ denotes the spin-Pauli matrices. While the values of sublattice matrices τ are given by:

(4)
τ x = 0 I I 0 τ y = 0 i I i I 0 τ z = I 0 0 I

The Hamiltonian in Eq. (3) can be written in the matrix form as follows:

(4)
H ^ = ( M n i k x v 1 k y v 2 δ n M δ i k x v 1 k y v 2 i k x v 1 k y v 2 δ M n δ i k x v 1 k y v 2 n M )

Then H can be diagonalized to get the energy levels:

(5)
E = μ v 1 2 k x 2 + v 2 2 k y 2 + n 2 + δ 2 + M 2 + 2 v n 2 + δ 2 v 1 2 k x 2 + n 2 v 2 2 k y 2 + M 2  

Where μ = ± 1 , v = 1

The energy obtained in Eq. (5) will be utilized to compute the band structure and energy band gap. Subsequently, the dynamic properties of the system will be analyzed. Dynamic properties such as group velocity v g = 1 k E k and effective mass m * = 2 k 2 E k are essential properties for assessing the electronic applications of a material because the material’s mobility depends on them.

3. Results and Discussions

3.1. Energy levels and energy gap in crystalline 3D SnTe(001) surface state with exchange effect:

The Hamiltonian of SnTe deposited on a ferromagnetic material is diagonalized in Eq. (5). It is important to note that the resulting energy dispersion relation is anisotropic due to the different in Fermi velocities along the x- and y-directions, with v1 = 1.3 eV Å and v2 = 2.4 eV Å. Consequently, the energy levels must be analyzed along both directions accordingly.

According to the above equation, if n = 0, δ = 0, and M = 0 equals zero. In the isotropic case, immediately. The dispersion equation in Eq. 5 was reduced to the graphine dispersion relation.

According to the above equation, in the isotropic case where n = 0, δ = 0, and M = 0, the dispersion equation in Eq. (5) simplifies directly to the graphene-like dispersion relation ( E μ v = μ vk x ), characterized by the emergence of two gapless Dirac cones at kx=0, ky=0. However, in the anisotropic case (v1≠v2), and due to the presence of n and δ , the two copies of Dirac cones shifted accordingly to k x = ± n 2 + δ 2 v 1 . Moreover, at k=0, a bandgap of   Δ E   =   ± n 2 + δ 2     appears. Fig. 1(a) demonstrates the energy levels versus k x , when M = 0 -black curve- conduction state intersects the valence state at =   n 2 + δ 2 v 1 , 0 and =   n 2 + δ 2 v 1 , 0 . The energy at , equal zero, at these points, Dirac fermions are massless. It can be concluded that the perturbation terms ( n and δ ) induce a horizontal displacement of the Dirac points, causing them to shift and separate from each other.

Electronic band structure of SnTe(001) near X1 point at different values of exchange effect: black line M = 0 , red line M = 0.02 , blue line M = 0.04 (a) in x-direction where k y = 0 (b) in y-direction where k x = 0 .
Fig. 1.
Electronic band structure of SnTe(001) near X1 point at different values of exchange effect: black line M = 0 , red line M = 0.02 , blue line M = 0.04 (a) in x-direction where k y = 0 (b) in y-direction where k x = 0 .

When a ferromagnetic substrate is present, the exchange effect causes the Dirac cones to separate vertically, resulting in the opening of an energy gap. The size of this energy gap depends on the magnitude of the exchange effect, denoted as M, and on the position of the bandgap. Fig. 1(a) shows that by including M, the two valence bands and the two conduction bands separate from each other, and the degeneracy of these states is broken. From Fig. 1(a), we can see that there is a small shift in the position of and points. The new locations of these points are ± 1 v 1 n 2 + δ 2 n 2 M 2 n 2 + δ 2 , 0 , which is dependent on the value of the exchange effect (M).

From Fig. 1(b), which represents the band structure along the y-direction, it can be seen that even in the absence of Magnetization, there is an energy gap although if which equals 2 δ when M = 0. This gap doesn’t change significantly by the magnetization. From Fig. 1(b), even in the absence of M=0, there are two saddle points in y-direction at points: s 1 = 0 , n / v 2 and s 2 = 0 , n / v 2 . When the exchange effect is included (M> 0), the positions of the two saddle points are shifted. The new positions of these saddle points are 0 , ± n 2     M 2 v 2 , which is exchange field dependent.

From the differences between Fig. 1(a) and (b), it’s obvious that the energy is anisotropic and the fermions are much massive in the y-direction. To quantify how the energy gap changes in both directions, the energy band gap is calculated from Eq. (5). By taking the minimum difference between the lower conduction band and the higher valence band, using the following equation:

(6)
E g =   m i n E 1 1 k x , k y E 1 1 k x , k y  

In Fig. 2, the dependence of the difference between the energy band gap on the exchange effect is elucidated in both x- and y-directions. In the x-direction, the energy band gap vanishes (Eg=0) when the exchange effect is zero (M=0). Then, Eg increases as the exchange effect M increases. This result is expected because the exchange effect splits the conduction band from the valence band, thereby opening the energy band gap.

Energy band gap with exchange effect in x-direction and in y-direction.
Fig. 2.
Energy band gap with exchange effect in x-direction and in y-direction.

However, in the y-direction, the energy band gap already exists without the exchange effect and remains constant, and its value equals 2 δ until M   =   δ 2 + n 2 Beyond this point, as the exchange effect increases, the energy band gap also increases. At this stage, the energy band gap becomes equal in both x and y directions. This occurs because beyond this critical point, the saddle points S 1 and S 2 are removed, along with and . Consequently, the energy gap occurs at Γ point. Fig. 3 demonstrates the lower conduction level and the higher valence level in both x- and y-directions when M   =   δ 2 + n 2 . In both directions, the band gap is located at the Γ point. Our results are consistent with the previous experimental and theoretical studies that the exchange effect produced by the contact between TI/ferrosubstrate leads to a splitting in the Dirac cone (Eremeev et al., 2013; Hirahara et al., 2017; Otrokov et al., 2017a,b). For example, Otrokov et. al. show experimentally that there is a Dirac cone gap opening of 100 meV in MnBi2Se4/TCI heterostructure (Otrokov et al., 2017b).

Lower conduction level and higher valance level when M  =   δ 2 + n 2 in both x-direction and y-direction.
Fig. 3.
Lower conduction level and higher valance level when =   δ 2 + n 2 in both x-direction and y-direction.

It’s obvious from Fig. 2, when M   =   δ 2 + n 2 the energy band gap is equal in both directions, and the saddle points S 1 , S 2 and the , points are removed. The energy gap occurs at k=0.

3.2. Group velocity of fermions in SnTe(001) surface state with exchange effect

Group velocity can be calculated analytically using equation v g = 1 k E k .

Fig. 4(a) represents the x-component of the group velocity of conduction levels with k x , and k y = 0 , at different values of the exchange effect (M). In the absence of the exchange effect (M=0), the group velocity of the first conduction is either +/-v1, which gives strong evidence that the Dirac fermions behave linearly with k x . The group velocity has a negative value of velocity -1.3 ev\A (denoted v 1 ), in the following values of k x : k x < n 2 + δ 2 and 0 < k x < n 2 + δ 2   . While the group velocity of the electrons is along the positive x-direction if kx satisfy the following conditions: n 2 + δ 2 < k x < 0 or if k x > n 2 + δ 2 . From Fig. 4(a), it can be seen that the group velocity in the second conduction band has a value of -1.3 ev\A for k x < 0 and 1.3 ev/A for k x > 0 .

The x-component and y-component of the group velocity (vx and vy) of Dirac fermions in SnTe(001) as a function of momentum at different values of exchange effect M.
Fig. 4.
The x-component and y-component of the group velocity (vx and vy) of Dirac fermions in SnTe(001) as a function of momentum at different values of exchange effect M.

When the exchange effect switches, the group velocities along the x-axis for the first conduction band are not zero at Dirac points because of the band gap opening in the band structure. Also, it can be seen that the maximum velocity it reached is smaller than v1. The group velocity switches its sign from positive to negative values in the k x falls in the range + 1 v 1 n 2 + δ 2 n 2 M 2 n 2 + δ 2 , 0 .   However, for the upper state, the maximum and minimum values of the group velocity remain v 1 and v 1 , respectively, but the value of the group velocity along the curve decreases and converges to the ± v1 at high momenta.

Fig. 4(b) represents the y-component of the group velocity of conduction levels with k y , and k x = 0 , at different values of the exchange effect, for M=0, the group velocity of the first conduction level flips from a negative value when k y <  n / v 2 to positive value when n / v 2 < k y < 0 . Subsequently, the sign of group velocity reverses to minus when 0 < k y < n / v 2 , and it becomes positive when k y > n / v 2 . Note that the maximum and minimum values of group velocity are v 2 and v 2 . In the second conduction band the sign of the group velocity flips from negative when k y < 0 , to positive when k y > 0 .

When the exchange effect switches, the group velocity for both lower and upper bands has similar behavior as the x-direction due to the band gap opening and the curvature of the bands.

The presence of saddle points offers opportunities for manipulating the electronic properties of topological insulators through external fields such as electric fields, magnetic fields, or strain. By tuning the position or energy of saddle points, one can control the group velocity and the functionality of the material to be utilized for different applications. Because of the importance of the , Dirac points and saddle points S 1 and S 2 the group velocity will be studied in detail at these points in the first and second conduction states.

Fig. 5 demonstrates the behavior of the group velocity in the x-direction of Dirac fermions with momentum n 2 + δ 2 v 1 , 0 , and the group velocity in the y-direction of Dirac fermions with momentum 0 , n / v 2 , against the exchange effect M, in the first and the second conduction states. The group velocity in the x-direction of Dirac fermions at n 2 + δ 2 v 1 , 0 , the point in the first conduction state has its minimal value at M=0. As M increases (either parallel or antiparallel to the host spin directions), the group velocity increases as shown in the figure, up to critical exchange fields   ± n 2 + δ 2 then starts to decrease slightly. On the other hand, in the second conduction state, a group of velocities at Λ approaches its maximum value v 1 as M gets closer to 0, then as the magnetization deviates from zero. The group velocity decreases as shown in Fig. 5. Similar behavior can be noticed for the group velocity along the y-direction. The figure shows that the group velocities for upper and lower conduction/valence bands are found to behave in opposite to each other as the magnetization vector of the ferromagnet is applied along the material.

Group velocity of Dirac fermions at surface state in SnTe (001) as a function of exchange effect, both in the x-direction at Λ =   n 2 + δ 2 v 1 , 0 point, and y-direction at S 1 = 0 , n / v 2   point.
Fig. 5.
Group velocity of Dirac fermions at surface state in SnTe (001) as a function of exchange effect, both in the x-direction at Λ =   n 2 + δ 2 v 1 , 0 point, and y-direction at S 1 = 0 , n / v 2   point.

3.3. Effective mass of fermions in SnTe(001) surface state with exchange effect

The effective mass is defined as the mass that appears in the equation of motion for electrons in a solid. It characterizes the curvature of the energy bands, which determines the electrons’ behavior, such as their mobility and conductivity. Since the energy dispersion relation is also available analytically, the effective mass can be calculated analytically in both the x and y directions using equation m * = 2 k 2 E ( k ) as the following:

(7)
1 m x k x , k y = v 1 4 k x 2 E μ υ k x , k y 3 1 + ν n 2 + δ 2 h k x , k y 2 + v 1 2 E μ υ k x , k y 1 + ν n 2 + δ 2 h k x , k y ν v 1 2 k x 2 n 2 + δ 2 2 h k x , k y 3

(8)
1 m y k x , k y = v 2 4 k y 2 E μ υ k x , k y 3 1 + ν n 2 h k x , k y 2 + v 2 2 E μ υ k x , k y 1 + ν n 2 h k x , k y ν v 2 2 k y 2 n 4 h k x , k y 3

From Eqs. (7 and 8), it’s obvious that the effective mass mx and my of electrons in the SnTe(001) surface state with exchange effect (M) is anisotropic, note that n and δ parameters that arise from symmetries of the surface state play a critical role in the properties of the material. Due to the presence of electron-hole symmetry, we focus on the conduction band only.

Fig. 6(a) and (b) show the dependence of the effective mass mx and my of the electron on the exchange effect M.

Reciprocal of effective mass for Dirac fermions in SnTe(001) surface state in both (a) x-direction and (b) y-direction with momentum.
Fig. 6.
Reciprocal of effective mass for Dirac fermions in SnTe(001) surface state in both (a) x-direction and (b) y-direction with momentum.

When M=0, the effective mass in the x-direction becomes zero at Dirac cones, as shown in Fig. 6(a). This implies that the Dirac fermions with momentum n 2 + δ 2 v 1 , 0 are massless. However, they become massive when there is an exchange effect due to the presence of a ferromagnetic substrate, for example.

Including an exchange term affects the electrons in both the first and second conduction states. In the first conduction state, as mentioned, the Dirac fermions become massive, and the minimum value of the effective mass shifts. This shift occurs due to the displacement of the Λ and Λ points, and the minimum value occurs at ± 1 v 1 n 2 + δ 2 n 2 M 2 n 2 + δ 2 , 0 momentum. This means that the exchange effect can be used to control the effective mass of fermions. The exchange effect plays an important role in switching the effective mass of the electron from zero to a given value, as presented in Fig. 6.

In addition, within a certain range of exchange effects, there exists a range of momentum where the effective mass in the first conduction state becomes negative. This implies that the electrons behave like holes, as they respond to the field opposite to how a free electron would. This electron-hole symmetry plays a crucial role that leading to topological phase change in the material.

In the second conduction band without the exchange effect, the fermions are highly massive. When the exchange effect is included (M 0 ) , the effective mass decreases, and the minimum value of effective mass occurs at k=0.

The Dirac fermions in the y-direction have opposite behavior; they are massive even when the exchange effect is zero, and the minimum value of effective mass occurs at saddle points S 1 and S 2 . When the exchange effect is introduced, the fermions become even more massive, and the minimum value of effective mass shifts accordingly to 0 , ± n 2     M 2 v 2 . Similar to the x-direction, there is a range of M values corresponding to the effective mass of Dirac electrons, which exhibits negative mass and behaves like holes at certain momenta in the first conduction state. Our results are inconsistent with experimental findings of Anqi Zhang et al. that support the magnetoelectrical transport properties of SnTe thin films deposit on magnetic substrates can be tuned by an external magnetic field by examining the Linear magnetic resistance in SnTe/EuIG heterostructures with applied magnetic field (Zhang et al., 2022). In the x-direction, there is a range of momenta where the sign of the effective mass in the first conduction state becomes negative. This occurs when n 2 + δ 2 n   1 m x < 0 and 0 < 1 m x   < n 2 + δ 2 n . Within this interval of m x , there exists a specific range of momentum for which the effective mass in the x-direction is negative ( m x <0). To determine this interval, the equation Eq. (107.a) 1 / m x = 0 must be solved. Due to the complexity 1 / m x , numerical methods can be employed to solve this equation for each value of the exchange effect, and then fit a curve to obtain a proper formula.

Fig. 7 illustrates the momentum values corresponding to the first conduction state, where the sign of the effective mass in the x-direction switches at each value of exchange effect.

Critical value of kx as function M. a) the value of kx at which mx changes from positive to negative b) the value of kx at which mx changes from negative to positive.
Fig. 7.
Critical value of kx as function M. a) the value of kx at which mx changes from positive to negative b) the value of kx at which mx changes from negative to positive.

In Fig. 7(a), the momentum values are plotted against the exchange effect, for instance, where the sign of the x-direction effective mass changes from positive to negative. In Fig. 7(b), the momentum values are plotted for cases where the sign of the x-direction effective mass shifts from negative to positive.

The dependence of the k on the exchange effect M is given by the relation k ( M ) = aM 2 + bM 4 + cM 6 + dM 8 + which serves as the fitted function for the curves. The fitting parameters (a,b,c,d, and e) have been listed in Table 1.

Table 1. The values of fitting parameters in the function k(M) along the x-direction.
Parameter k1(M)-from positive to negative- k2(M)-from negative to positive-
a 88270.3 -144089.6
b -88265.3 144084.6
c -117370.8 117370.8
d 20189447.8 -20189450.3
e -0.038 0.038

At each value of the exchange effect M, electrons with momentum k1(M) < k < k2(M) exhibits a negative effective mass in the x-direction and behaves similarly to holes.

In the y-direction, there is a range of momenta where the sign of the effective mass in the first conduction state becomes negative. This occurs when 1 m y < 0 and 0 < 1 m y   < n . Within this interval of m y , there exists a specific range of momentum for which the effective mass in the y-direction is negative. To determine this interval, the equation 1 / m y = 0 must be solved. Applying the same fitting procedure, we understand the behavior dependence of m y on k.

Fig. 8 illustrates the momentum values corresponding to the first conduction state, where the sign of the effective mass in the y-direction switches at each value of exchange effect. In Fig. 8(a), the momentum values are plotted against the exchange effect for instances where the sign of the y-direction effective mass changes from positive to negative.

Momentum when the sign of the effective mass in y-direction flips with exchange effect.
Fig. 8.
Momentum when the sign of the effective mass in y-direction flips with exchange effect.

In Fig. 8(b), the momentum values are plotted for cases where the sign of the y-direction effective mass shifts from negative to positive. This behavior can be well explained through the fitting functional relation k M = a*ln b c*M M 2 + d*M 2 + e*M 4 + f*M 6   + g . The fitting parameter values have been given in Table 2.

Table 2. The values of parameters of the fitted function k(M) in the y-direction.
Parameter k1(M)-from positive to negative- k2(M)-from negative to positive-
a 0.003096 -0.003096
b -0.144 0.04
c 0.144 0.018
d 0.0087 -0.0087
e 667.755 -667.755
f -18603.063 18603.063
g -0.0127 0.00783

At each value of the exchange effect M, electrons with momentum k1(M)< k < k2(M) exhibit a negative effective mass in the y-direction and behave similarly to holes.

Because of the importance of the , points and saddle points S 1 and S 2 the effective mass studied at these points in the first and second conduction states with exchange effect have been shown in Fig. 9. The effective mass in x-direction of Dirac fermions at n 2 + δ 2 v 1 , 0 momentum in the first conduction state decreases when M < 0 , until M=0, at this point the effective mass in x-direction equal zero, representng the minimum value of effective mass of fermions with n 2 + δ 2 v 1 , 0 momentum in the first conduction state, when M > 0 the effective mass increases. In the second conduction state, Dirac fermions at the Λ point are highly massive, and the effective mass in the x-direction remains approximately constant with the exchange effect.

Reciprocal of the effective mass of Dirac fermions at surface state in SnTe (001) as a function of exchange effect both the x-direction at Λ   =   n 2 + δ 2 v 1 , 0 point, and y-direction at S 1 = 0 , n / v 2   point.
Fig. 9.
Reciprocal of the effective mass of Dirac fermions at surface state in SnTe (001) as a function of exchange effect both the x-direction at Λ   =   n 2 + δ 2 v 1 , 0 point, and y-direction at S 1 = 0 , n / v 2   point.

The effective mass in the y-direction of Dirac fermions, which has momentum 0 , n / v 2 in the first conduction state, effective mass decreases when M < 0 , reaching its minimum value at M=0. However, even at M=0, the fermions remain massive, unlike in the x-direction where fermions become massless. As M becomes positive, the effective mass increases again. In the second conduction state, Dirac fermions at the saddle point are highly massive, and the effective mass in the y-direction remains approximately constant with the exchange effect.

4. Conclusion

This study has provided a comprehensive theoretical investigation into the electronic, energy spectrum, and dynamical properties of Dirac fermions in 3D SnTe(001) surface state under combined exchange and strain effects. By analyzing crystalline topological insulator SnTe we have gained valuable insights into the behavior of these materials under different conditions. Our analysis revealed significant alterations in electronic properties because of the exchange effect. The examination of bandgap behavior, group velocity, and effective mass, provided a detailed understanding of its electronic structure. Our results reveal that by tuning the exchange effect, the dynamical properties of the surface state electrons can be controlled.

Overall, this study contributes to the growing body of knowledge on topological insulators and underscores their potential for advancements in various technological domains. The insights gained from this research pave the way for further experimental validations and theoretical developments, ultimately driving innovation in materials science and engineering.

CRediT authorship contribution statement

Khaled Abdulhaq: Writing – original draft, Code writing. Diana Dahliah and Mohammad Elsiad: Supervision, Conceptualization, Methodology, Investigation, Writing – review & editing.

Declaration of competing interest

he authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

Declaration of Generative AI and AI-assisted technologies in the writing process

The authors confirm that there was no use of artificial intelligence (AI)-assisted technology for assisting in the writing or editing of the manuscript and no images were manipulated using AI.

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